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| Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation. All devices are planar passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 dBm (20 mW), and uniformity within 2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm. Devices are available with active areas from 0.5 mm to 3.0 mm in TO-type packages or on thermoelectric coolers for increased sensitivity (see below). Photodiodes can also be mounted on customized ceramic sub-mounts to suit specific application requirements. PerkinElmer Optoelectronics Canada is qualified to ISO-9001 and operates to MIL-Q9858A and AQAP-1 quality standards. All devices undergo extended life-test and periodic process qualification programs to assure high reliability. In addition, all production devices are sourced from a qualified wafer, screened with a 16 hour, 200C burn-in at -10V bias (C30619 and C30641) or -5V (C30642 and C30665), and tested to meet responsivity, spectral noise, capacitance, shunt resistance and dark current specifications. Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A NEW LIGHT. Features * 0.5, 1.0, 2.0, and 3.0 mm diameters * High responsivity from 850 nm to 1550 nm * High shunt resistance, low dark current * TE-cooled package options * Low capacitance for fast response times Applications * Power meters * Fiber identifiers * Laser burn-in racks * Near infrared instrumentation *F .T.I.R. spectroscopy C30619, C30641, C30642, C30665 Package Options TE-Cooled Devices: Large-area detectors are available mounted on a 1-stage or 2-stage thermoelectric (TE) cooler. Cooling increases shunt resistance (see Figure 2) thereby reducing noise for increased sensitivity. Typical detector temperature is -10C with a 1-stage TE cooler or -35C using a 2-stage cooler. A TE-cooler option can be specified by adding the extension -TC (1-stage cooler) or -DTC (2stage cooler) to the standard part number (see ordering guide). More information is available from the "TC-Series Cooled Photodiodes" datasheet from PerkinElmer Optoelectronics Canada. Detector and Pre-Amplifier: Large-area InGaAs detectors are also available integrated with a preamplifier and TE-cooler. The HTE-series features large-area InGaAs detectors with a high gain hybrid transimpedence amplifier mounted on a 2-stage TE cooler. TE-cooling maximizes sensitivity and stabilizes op-amp offset and output characteristics. This provides an easy-to-use high sensitivity detector platform optimized for good temperature stability over a wide operating temperature range. More information is available from the HTE-series datasheet. The standard HTE-2642 incorporates a C30642E chip. Specifications (at VR = VOP (typical), 22C) Parameter Min Active Diameter Responsivity At 850 nm 0.10 At 1300 nm 0.80 At 1550 nm 0.85 Shunt Resistance (VR = 10 mV) 1 10 Dark Current Spectral Noise Current (10 kHz, 1.0 Hz) Capacitance At VR = 0V At VR = VOP Bandwidth (-3 dB, RL = 50) Linearity 2 Available package types C30619 Typ 0.5 0.20 0.90 0.95 250 1 0.02 20 8 350 > +13 D2, D14 C30641 Typ 1.0 0.20 0.90 0.95 50 5 0.04 100 40 75 > +13 D2, D14 Units Max mm A/W A/W A/W M nA pA/Hz pF pF MHz dBm - Max Min 0.10 0.80 0.85 5 20 0.10 25 10 50 0.15 125 50 Operating Ratings Parameter Min Operating Voltage Breakdown Voltage Maximum Forward Current Maximum Photocurrent Power Dissipation Storage Temperature Operating Temperature 0 20 C30619 Typ 5 80 C30641 Typ 2 80 Units Max 5 10 100 100 125 85 V V mA mA mW C C Max 10 10 100 100 125 85 Min 0 20 -60 -40 -80 -40 Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < 0.04 dB (1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ). C30619, C30641, C30642, C30665 Figure 1. Typical Responsivity vs. Wavelength. Figure 2. Typical Shunt Resistance as a Function of Temperature. Specifications (at VR = VOP (typical), 22C) Parameter Min Active Diameter Responsivity At 850 nm 0.10 At 1300 nm 0.80 At 1550 nm 0.85 Shunt Resistance (VR = 10 mV) 1 2 Dark Current Spectral Noise Current (10 kHz, 1.0 Hz) Capacitance At VR = 0V At VR = 2.0V (typical) Bandwidth (-3 dB, RL = 50) Linearity 2 Available package types C30642 Typ 2.0 0.20 0.90 0.95 25 103 0.03 300 150 20 +11 D15 C30665 Typ 3.0 0.20 0.90 0.95 10 253 0.04 1000 400 3.0 +11 D15 Units Max mm A/W A/W A/W M nA pA/Hz pF pF MHz dBm - Max Min 0.10 0.80 0.85 1 0.15 500 0.20 1250 Operating Ratings Parameter Min Operating Voltage Breakdown Voltage Maximum Forward Current Maximum Photocurrent Power Dissipation Storage Temperature Operating Temperature C30642 Typ 0 50 C30665 Typ 0 50 Units Max 5 10 100 250 125 85 V V mA mA mW C C Max 5 Min 15 10 10 100 250 125 85 -60 -40 -80 -40 Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < 0.04 dB (1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ). Note 3. At VR = 2.0V C30619, C30641, C30642, C30665 Figure 3. Typical Capacitance vs. Operating Voltage. Figure 4. Typical Dark Current vs. Operating Voltage. Wavelength (nm) 850 1060 1300 1550 1650 Temperature Coefficient1 (%/C) -0.121 0.039 0.012 0.009 (20C to 85C) 0.085 (-40C to 20C) 1.287 Note1: Measured from -40C to +85C except 1650nm, as indicated. Figure 5. Typical Responsivity Temperature Coefficients. Figure 6. Typical Responsivity Scan of a 1mm Photodiode. Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order. Figure 8. Package D-14: TO-18 with Glass Window. C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L -X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler (Not yet available for C30665) Silicon Glass (See below for availability) 0.5mm diameter 1.0mm diameter 2.0mm diameter 3.0mm diameter Window Option: E: G: Chip Type: 619: 641: 642: 665: Device Package Availability Window Option E G Window Type C30619 Silicon Glass D21 D14 Package Type C30641 C30642 D21 D14 D15 C30665 D15 Note 1: Special Order For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto PerkinElmer Optoelectronics 22001 Dumberry Road, Vaudreuil, Quebec Canada J7V 8P7 Phone: (450) 424-3300 Fax: (450) 424-3411 All values are nominal; specifications subject to change without notice. (c)2000 PerkinElmer, Inc. All rights reserved. 0700 is a registered trademark of PerkinElmer, Inc. |
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